Datasheet > 2SK690R

2SK690R

更新时间： 2024-09-15 15:25:15

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	164K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SK690R 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SK690R 数据手册

High Frequency FETs

2SK690

GaAs N-Channel MES FET

For UHF medium output power amplification

unit: mm

1.5±0.1

4.5±0.1

1.6±0.2

■ Features

● Large collector dissipation P_C

● Mini-power type package, allowing downsizing of the sets and

automatic insertion through the tape/magazine packing.

45˚

0.4±0.08

0.4±0.04

0.5±0.08

1.5±0.1

■ Absolute Maximum Ratings (Ta = 25°C)

3.0±0.15

Parameter

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DS

V_GS

I_D

Ratings

Unit

−6

1: Gate

2: Source

3: Drain

marking

0.6

Gate current

I_G

EIAJ: SC-62

Mini-Power Type Package (3-pin)

Allowable power dissipation

Channel temperature

Storage temperature

P_D

T_ch

150

°C

Marking Symbol: M

Internal Connection

T_stg

−55 to +150

−35 to +85

Operating ambient temperature T_opr

1kΩ

^*PC board: Copper foil of the drain portion should have a area of 1cm²or

more and the board thickness should be 1.7mm.

Zener Di

12V

Zener Di

8.2V

■ Electrical Characteristics (Ta = 25°C)

Parameter

Drain current

Symbol

Conditions

V_DS= 5V, V_GS= 0

min

typ

max

600

Unit

µA

1, 2

I_DD

I_DSX

I_GSS

150

350

Drain cut-off current

Gate to Source leakage current

Gate to Drain current

Gate to Source cut-off voltage

Forward transfer admittance

Output power

V_DS= 10V, V_GS= −6V

V_DS= 0, V_GS= −6V

V_DS= 16V

I_GDO

V_GSC

| Y_fs|

P_out

500

−6

V_DS= 5V, I_DS= 1mA

V_DS= 5V, I_DS= 50mA, f = 1kHz

150

dBm

V_DS= 6V, I_DS= 100mA

f = 940MHz, P_in= 10dBm

Power gain

Additional efficiency

η_add

¹I_DSSrank classification

Rank

I_DSS(mA)

150 to 280

220 to 380

320 to 600

²Pulse measurement

12 3

中文翻译

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