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2SK4035 PDF预览

2SK4035

更新时间： 2024-09-15 22:35:55
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 150K
描述
SWITCHING N-CHANNEL POWER MOSFET

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中文翻译

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2SK4035 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：MINIMOLD THIN, SC-96, 3 PINReach Compliance Code：compliant
风险等级：5.77配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (ID)：0.5 A
最大漏源导通电阻：4.5 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK4035 数据手册

 浏览型号2SK4035的Datasheet PDF文件第2页浏览型号2SK4035的Datasheet PDF文件第3页浏览型号2SK4035的Datasheet PDF文件第4页浏览型号2SK4035的Datasheet PDF文件第5页浏览型号2SK4035的Datasheet PDF文件第6页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4035  
SWITCHING  
N-CHANNEL POWER MOSFET  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
2SK4035 is the best switching element for the DC-DC  
converter usage from 24 to 48 V in the direct current input  
voltage. It excels in the switching characteristics in low on-state  
resistance and because it is the small size surface mounting  
externals, is the best for the high-speed switching usage of the  
equipment that promotes the automation of space-saving and  
mounting.  
+0.1  
0.4  
+0.1  
–0.05  
0.16  
–0.06  
3
0 to 0.1  
1
2
FEATURES  
0.65  
• Low input capacitance  
0.95 0.95  
1.9  
Ciss = 74 pF TYP.  
• Low on-state resistance  
RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)  
• Small and surface mount package (SC-96)  
0.9 to 1.1  
1. Gate  
2. Source  
3. Drain  
2.9 0.2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
2SK4035  
2SK4035-A  
SC-96 (Mini Mold Thin Type)  
SC-96 (Mini Mold Thin Type)  
Note  
EQUIVALENT CIRCUIT  
Note Pb-free (This product does not contain Pb in external  
electrode and other parts.)  
Drain  
Marking: XP  
Body  
Diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Gate  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TA = 25°C) Note2  
Channel Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
250  
±30  
V
V
Gate  
Protection  
Diode  
±0.5  
A
Source  
±2.0  
A
0.2  
W
W
°C  
°C  
PT2  
1.25  
Tch  
Tstg  
150  
Storage Temperature  
−55 to +150  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17447EJ1V0DS00 (1st edition)  
Date Published July 2005 NS CP(K)  
Printed in Japan  
2005  
123456

中文翻译

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与2SK4035相关器件

型号 品牌 获取价格 描述 数据表
2SK4035-A NEC

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 		SWITCHING N-CHANNEL POWER MOSFET
2SK4035-T2B-A RENESAS

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 		TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,500MA I(D),SOT-346
2SK4035-T2B-AT RENESAS

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 		TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,500MA I(D),SOT-346
2SK4036-AZ RENESAS

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 		500mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, SC-43A, 3 PIN
2SK4036-AZ NEC

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 		Small Signal Field-Effect Transistor, 0.5A I(D), 250V, 1-Element, N-Channel, Silicon, Meta
2SK4036-T RENESAS

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 		2SK4036-T
2SK4036-T-AZ RENESAS

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 		Switching N-Channel Power Mosfet, TO-92, /Tape
2SK4037 TOSHIBA

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 		470 MHz Band Amplifier Applications
2SK404 SANYO

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 		HF Amp, AF Amp Applications
2SK4040-01 FUJI

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