2SK4035-A

更新时间： 2024-09-15 21:54:59

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
6页	150K
描述
SWITCHING N-CHANNEL POWER MOSFET

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中文翻译

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数据手册

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2SK4035-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK4035

SWITCHING

N-CHANNEL POWER MOSFET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

2SK4035 is the best switching element for the DC-DC

converter usage from 24 to 48 V in the direct current input

voltage. It excels in the switching characteristics in low on-state

resistance and because it is the small size surface mounting

externals, is the best for the high-speed switching usage of the

equipment that promotes the automation of space-saving and

mounting.

+0.1

0.4

+0.1

–0.05

0.16

–0.06

0 to 0.1

FEATURES

0.65

• Low input capacitance

0.95 0.95

1.9

C^iss= 74 pF TYP.

• Low on-state resistance

R^DS(on)= 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)

• Small and surface mount package (SC-96)

0.9 to 1.1

1. Gate

2. Source

3. Drain

2.9 0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK4035

2SK4035-A

SC-96 (Mini Mold Thin Type)

Note

EQUIVALENT CIRCUIT

Note Pb-free (This product does not contain Pb in external

electrode and other parts.)

Drain

Marking: XP

Body

Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Gate

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^A= 25°C) ^Note2

Channel Temperature

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

250

±30

Gate

Protection

Diode

±0.5

Source

±2.0

0.2

°C

P^T2

1.25

T^ch

T^stg

150

Storage Temperature

−55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17447EJ1V0DS00 (1st edition)

Date Published July 2005 NS CP(K)

Printed in Japan

2005

12 3 4 5 6

中文翻译

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与2SK4035-A相关器件

型号	品牌	获取价格	描述	数据表
2SK4035-T2B-A	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,500MA I(D),SOT-346
2SK4035-T2B-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,500MA I(D),SOT-346
2SK4036-AZ	RENESAS	获取价格	500mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, SC-43A, 3 PIN
2SK4036-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 250V, 1-Element, N-Channel, Silicon, Meta
2SK4036-T	RENESAS	获取价格	2SK4036-T
2SK4036-T-AZ	RENESAS	获取价格	Switching N-Channel Power Mosfet, TO-92, /Tape
2SK4037	TOSHIBA	获取价格	470 MHz Band Amplifier Applications
2SK404	SANYO	获取价格	HF Amp, AF Amp Applications
2SK4040-01	FUJI	获取价格	TFP
2SK4041-AT	RENESAS	获取价格	2SK4041-AT

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