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2SK4033(TE16L1,F)

更新时间： 2024-11-09 21:19:07
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 241K
描述
Power Field-Effect Transistor

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2SK4033(TE16L1,F) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.7
Base Number Matches：1

2SK4033(TE16L1,F) 数据手册

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2SK4033  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)  
2SK4033  
Chopper Regulator, DC-DC Converter and Motor Drive  
Applications  
Unit: mm  
6.5 ± 0.2  
5.2 ± 0. 2  
0.6 MAX.  
z 4-V gate drive  
z Low drain−source ON-resistance:  
z High forward transfer admittance:  
R
= 0.07 Ω (typ.)  
DS (ON)  
|Y | = 6.0 S (typ.)  
fs  
1.1 ± 0.2  
z Low leakage current:  
z Enhancement mode:  
I
= 100 μA (max) (V  
= 60 V)  
DSS  
DS  
V
= 1.3 to 2.5 V (V = 10 V, I = 1 mA)  
DS D  
th  
0.8 MAX.  
0.6 MAX.  
1.05 MAX.  
2 3  
0.6 ± 0.15  
1
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
60  
60  
±20  
5
V
V
DSS  
2.3 ± 0.15 2.3 ± 0. 15  
2
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
1. GATE  
1
V
V
2. DRAIN  
GSS  
（HEAT SINK）  
3. SOURSE  
3
DC (Note 1)  
I
A
D
Drain current  
Pulse (Note 1)  
I
20  
20  
A
DP  
JEDEC  
⎯
⎯
Drain power dissipation (Tc = 25°C)  
Single-pulse avalanche energy  
P
W
D
AS  
AR  
JEITA  
E
40.5  
mJ  
(Note 2)  
TOSHIBA  
2-7J1B  
Avalanche current  
I
5
2
A
Weight: 0.36 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
6.25  
125  
°C / W  
°C / W  
th (ch−c)  
R
th (ch−a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: V = 25 V, T = 25°C (initial), L = 2.2 mH, R = 25 Ω, I = 5 A  
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-09-29  
123456

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