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2SK4034(TE24L,Q) PDF预览

2SK4034(TE24L,Q)

更新时间: 2024-09-16 14:39:27
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 168K
描述
MOSFET N-CH 60V 75A SC-97

2SK4034(TE24L,Q) 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.76
配置:Single最大漏极电流 (Abs) (ID):75 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

2SK4034(TE24L,Q) 数据手册

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2SK4034  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)  
2SK4034  
Switching Regulator, DC-DC Converter Applications  
Unit: mm  
Motor Drive Applications  
Low drain-source ON-resistance: R  
= 4.2 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 110 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (V  
= 60 V)  
DSS  
DS  
Enhancement mode: V = 1.5 to 2.5 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
60  
60  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
75  
GSS  
I
D
DC  
(Note 1)  
Drain current  
A
Pulse (t 1 ms)  
I
300  
125  
DP  
(Note 1)  
Drain power dissipation (Tc = 25°C)  
P
W
D
JEDEC  
JEITA  
Single pulse avalanche energy  
E
I
322  
mJ  
AS  
SC-97  
2-9F1B  
(Note 2)  
Avalanche current  
75  
12.5  
A
TOSHIBA  
AR  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.74 g (typ.)  
T
150  
ch  
Storage temperature range  
T
55 to 150  
stg  
Thermal Characteristics  
Note: Use the S1 pin to return the gate  
signal to source. Board traces should  
be designed so the main current flows  
to the S2 pin.  
Characteristics  
Symbol  
Max  
1.0  
Unit  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 78 μH, R = 25 Ω, I = 75 A  
4
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
1
2
Note 4: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.)  
are within the absolute maximum ratings.  
3
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/”Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-09-29  

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