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2SK1958-T1 PDF预览

2SK1958-T1

更新时间: 2024-11-21 14:39:27
品牌 Logo 应用领域
瑞萨 - RENESAS 开关光电二极管晶体管
页数 文件大小 规格书
8页 256K
描述
2SK1958-T1

2SK1958-T1 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.8
Is Samacsys:NBase Number Matches:1

2SK1958-T1 数据手册

 浏览型号2SK1958-T1的Datasheet PDF文件第2页浏览型号2SK1958-T1的Datasheet PDF文件第3页浏览型号2SK1958-T1的Datasheet PDF文件第4页浏览型号2SK1958-T1的Datasheet PDF文件第5页浏览型号2SK1958-T1的Datasheet PDF文件第6页浏览型号2SK1958-T1的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Elnics Corporation  
Issued by: Renesas Electronics Corporation (http://wwesas.com)  
Send any inquiries to http://www.renesas.com/inqu

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Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX
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Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX
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MOS Field Effect Transistor