是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 3 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1960-T2-AZ | RENESAS |
获取价格 |
2SK1960-T2-AZ | |
2SK1961 | SANYO |
获取价格 |
High-Frequency Low-Noise Amp Applications | |
2SK1961Y3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 100MA I(D) | TO-92 | |
2SK1961Y4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 100MA I(D) | TO-92VAR | |
2SK1961Y5 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 100MA I(D) | TO-92VAR | |
2SK1967 | PANASONIC |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK1967H | PANASONIC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK1967TX | PANASONIC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK1968 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1968 | RENESAS |
获取价格 |
Silicon N Channel MOS FET |