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2SK1960

更新时间: 2024-11-17 06:23:35
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关脉冲
页数 文件大小 规格书
1页 47K
描述
MOS Field Effect Transistor

2SK1960 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SK1960  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
Features  
+0.1  
1.80  
-0.1  
Gate can be driven by 1.5V  
Low ON resistance  
RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A  
RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A  
3
0.53  
2
1
+0.1  
0.48  
-0.1  
+0.1  
-0.1  
+0.1  
0.44  
-0.1  
1 Gate  
+0.1  
3.00  
-0.1  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
16  
Gate to source voltage  
V
7
3.0  
A
Drain current  
IDP  
A
6.0  
Power dissipation  
PD  
2.0  
W
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
IDSS  
IGSS  
VGS(off) VDS=3V,ID=1mA  
Testconditons  
Min  
Typ  
0.8  
Max  
100  
3.0  
Unit  
A
Drain cut-off current  
VDS=16V,VGS=0  
Gate leakage current  
VGS= 7V,VDS=0  
A
Gate to Source Cutoff Voltage  
Forward transfer admittance  
0.5  
2.0  
1.1  
V
VDS=3V,ID=1.5A  
VGS=1.5V,ID=0.1A  
VGS=2.5V,ID=1.5A  
VGS=4.0V,ID=1.5A  
S
Yfs  
0.35  
0.17  
0.12  
370  
320  
115  
70  
0.8  
0.3  
0.2  
Drain to source on-state resistance  
RDS(on)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=3V,VGS=0,f=1MHZ  
200  
150  
200  
ID=1.5A,VGS(on)=3V,RL=2  
,VDD=3V,RG=10  
Turn-off delay time  
Fall time  
td(off)  
tf  
1
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