生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.27 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1949L | ETC |
获取价格 |
||
2SK1949L-E | RENESAS |
获取价格 |
5A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
2SK1949S | ETC |
获取价格 |
||
2SK195 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal | |
2SK1950 | ETC |
获取价格 |
||
2SK1950(L) | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-251 | |
2SK1950(S) | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA | |
2SK1950S | RENESAS |
获取价格 |
3 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
2SK1951 | ETC |
获取价格 |
||
2SK1952 | HITACHI-METALS |
获取价格 |
Silicon N Channel MOS FET |