是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.1 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.15 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1958-T1 | RENESAS |
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2SK1958-T1 | |
2SK1958-T1 | NEC |
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Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal | |
2SK1958-T1-A | NEC |
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Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal | |
2SK1958-T1-AT | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,100MA I(D),SOT-323 | |
2SK1958-T2 | RENESAS |
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2SK1958-T2 | |
2SK1958-T2-A | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,100MA I(D),SOT-323 | |
2SK1959 | NEC |
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N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | |
2SK1959 | KEXIN |
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MOS Field Effect Transistor | |
2SK1959 | TYSEMI |
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Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX | |
2SK1959-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 16V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal- |