Datasheet > 2SK1950

2SK1950

更新时间： 2024-09-28 23:20:35

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2SK1950 数据手册

2SK1950

Silicon N Channel MOS FET

Application

DPAK–1

High speed power switching

Features

• Low on–resistance

• High speed switching

• Low drive current

• 2.5 V gate drive device can be driven from

3 V source

• Suitable for Switching regulator, DC – DC

converter

2, 4

1. Gate

2. Drain

3. Source

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Drain peak current

D(pulse)

———————————————————————————————————————————

Body–drain diode reverse drain current

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at Tc = 25 °C

12 3

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与2SK1950相关器件

型号	品牌	获取价格	描述	数据表
2SK1950(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 3A I(D) \| TO-251
2SK1950(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 3A I(D) \| TO-252AA
2SK1950S	RENESAS	获取价格	3 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
2SK1951	ETC	获取价格
2SK1952	HITACHI-METALS	获取价格	Silicon N Channel MOS FET
2SK1952	RENESAS	获取价格	0.028ohm, POWER, FET, TO-220FM, 3 PIN
2SK1953	NEC	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
2SK1953	RENESAS	获取价格	2A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1954	KEXIN	获取价格	MOS Field Effect Power Transistor
2SK1954	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE