Datasheet > 2SK1610

2SK1610

更新时间： 2024-11-11 23:20:35

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页数	文件大小	规格书
2页	40K
描述

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中文翻译

获取价格

数据手册

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2SK1610 数据手册

Power F-MOS FETs

2SK1610

Silicon N-Channel Power F-MOS FET

■ Features

● High avalanche energy capacity

● V_GSS: 30V guaranteed

unit: mm

● Low R_DS(on), high-speed switching characteristic

15.0±0.5

13.0±0.5

10.5±0.5

4.5±0.2

■ Applications

● High-speed switching (switching power supply)

2.0±0.1

● For high-frequency power amplification

■ Absolute Maximum Ratings (T_C= 25°C)

φ3.2±0.1

Parameter

Symbol

Ratings

500

Unit

Drain to Source breakdown voltage V_DSS

2.0±0.2

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±30

1.4±0.3

0.6±0.2

1.1±0.1

±13

Drain current

5.45±0.3

I_DP

±26

10.9±0.5

EAS^*

170

1: Gate

2: Drain

3: Source

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

120

P_D

2.5

EIAJ: SC-65(a)

TOP-3 Package (a)

Channel temperature

Storage temperature

Single pulse

T_ch

150

°C

T_stg

−55 to +150

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

I_DSS

Conditions

V_DS= 400V, V_GS= 0

V_GS= ±30V, V_DS= 0

I_D= 1mA, V_GS= 0

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

0.1

±1

I_GSS

Drain to Source breakdown voltage V_DSS

500

170

Avalanche energy capacity

Gate threshold voltage

EAS^*

V_th

L = 2mH, I_D= 13A, V_DD= 50V

V_DS= 25V, I_D= 1mA

V_GS= 10V, I_D= 7A

Drain to Source ON-resistance

Forward transfer admittance

R_DS(on)

| Y_fs|

0.45

0.6

Ω

V_DS= 25V, I_D= 7A

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

1700

300

120

100

V_DS= 20V, V_GS= 0, f = 1MHz

Turn-on time

t_on

V_GS= 10V, I_D= 7A

Fall time

t_f

V_DD= 150V, R_L= 21.4Ω

Turn-off time (delay time)

t_d(off)

210

Avalanche energy capacity test circuit

I_D

Gate

V_DS

V_DD

Drain

Source

PVS

R_GS

中文翻译

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