Datasheet > 2SK1310A_07

2SK1310A_07

更新时间： 2024-11-08 04:26:23

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管电视射频发射机
页数	文件大小	规格书
5页	190K
描述
TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

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中文翻译

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数据手册

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2SK1310A_07 数据手册

2SK1310A

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

2SK1310A

RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

Unit in mm

z Output Power

z Drain Efficiency

z Frequency

: Po ≥ 190 W (Min.)

: η = 65% (Typ.)

: f = 230 MHz

z Push−Pull Structure Package

ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

RATING

UNIT

100

±20

DSS

Gate-Source Voltage

Drain Current

GSS

Reverse Drain Current

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

250

°C

stg

150

−55~150

JEDEC

—

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

EIAJ

TOSHIBA

Weight: 17.5 g

2−22C2A

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5

中文翻译

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