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2SK1310A_07 PDF预览

2SK1310A_07

更新时间: 2024-11-21 04:26:23
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管电视射频发射机
页数 文件大小 规格书
5页 190K
描述
TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

2SK1310A_07 数据手册

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2SK1310A  
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE  
2SK1310A  
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER  
Unit in mm  
z Output Power  
z Drain Efficiency  
z Frequency  
: Po 190 W (Min.)  
: η = 65% (Typ.)  
D
: f = 230 MHz  
z PushPull Structure Package  
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)  
CHARACTERISTIC  
Drain-Source Voltage  
SYMBOL  
RATING  
UNIT  
V
V
100  
±20  
V
V
DSS  
Gate-Source Voltage  
Drain Current  
GSS  
I
12  
A
D
Reverse Drain Current  
Drain Power Dissipation  
Channel Temperature  
Storage Temperature Range  
I
12  
A
DR  
P
250  
W
°C  
°C  
D
ch  
stg  
T
150  
T
55~150  
JEDEC  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
EIAJ  
TOSHIBA  
Weight: 17.5 g  
222C2A  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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