Datasheet > 2SK1109-T1B

2SK1109-T1B

更新时间： 2024-02-28 08:14:04

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	173K
描述
2SK1109-T1B

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技术参数
数据手册

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2SK1109-T1B 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

2SK1109-T1B 数据手册

2SK1109

TYPICAL CHARACTERISTICS (T^A= 25°C)

GATE TO SOURCE CURRENT vs.

GATE TO SOURCE VOLTAGE

DERATING FACTOR OF

POWER DISSIPATION

100

−1.0 −0.8 −0.6 −0.4 −0.2

0.2 0.4 0.6 0.8 1.0

−10

−20

−30

−40

40 60

80 100 120 140 160

VGS - Gate to Source Voltage - V

T^A- Ambient Temperature - ˚C

INPUT CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

100

1.0

0.8

0.6

0.4

0.2

DS = 0 V

DS = 5 V

f = 1.0 MHz

100

−0.6

−0.4

−0.2

+0.2

DS - Drain to Source Voltage - V

GS - Gate to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD

TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE

DRAIN CURRENT CO-RELATION

10.0

DS = 5 V

5.0

2.0

1.0

0.5

|yfs

0.2

0.1

GS (off)

0.05

0.02

0.01

100

200

500 1000

Zero-Gate Voltage Drain Current -

Data Sheet D15940EJ1V0DS

1 2 3 456 7 8...10

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