Datasheet > 2SK1109-T1B

2SK1109-T1B

更新时间： 2024-01-19 23:27:21

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瑞萨 - RENESAS		/
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描述
2SK1109-T1B

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技术参数
数据手册

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2SK1109-T1B 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

2SK1109-T1B 数据手册

DATA SHEET

JUNCTION FIELD EFFECT TRANSISTOR

2SK1109

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SK1109 is suitable for converter of ECM.

0.8

FEATURES

• Compact package

1. Source

2. Drain

3. Gate

• High forward transfer admittance

1000 µS TYP. (I^DSS= 100 µA)

1600 µS TYP. (I^DSS= 200 µA)

• Includes diode and high resistance at G - S

ORDERING INFORMATION

PART NUMBER

2SK1109

PACKAGE

SC-59 (MM)

2.9 ± 0.2

1.1

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage ^Note

V^DSX

–20

EQUIVALENT CIRCUIT

Gate to Drain Voltage

Drain Current

V^GDO

I^D

°C

Drain

Gate Current

I^G

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

T^j

Gate

125

T^stg

–55 to +125 °C

Source

Note V^GS= –1.0 V

Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15940EJ1V0DS00 (1st edition)

Date Published January 2002 NS CP(K)

Printed in Japan

2002

1 234 5 6 7...10

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