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2SK1109-T1B PDF预览

2SK1109-T1B

更新时间: 2024-02-12 21:57:43
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
10页 173K
描述
2SK1109-T1B

2SK1109-T1B 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

2SK1109-T1B 数据手册

 浏览型号2SK1109-T1B的Datasheet PDF文件第1页浏览型号2SK1109-T1B的Datasheet PDF文件第2页浏览型号2SK1109-T1B的Datasheet PDF文件第3页浏览型号2SK1109-T1B的Datasheet PDF文件第5页浏览型号2SK1109-T1B的Datasheet PDF文件第6页浏览型号2SK1109-T1B的Datasheet PDF文件第7页 
2SK1109  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Cut-off Current  
Gate Cut-off Voltage  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 5.0 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
40  
600  
µA  
V
VGS(off)  
| yfs1 |  
| yfs2 |  
Ciss  
VDS = 5.0 V, ID = 1.0 µA  
0.1  
350  
350  
1.0  
Forward Transfer Admittance  
Forward Transfer Admittance  
Input Capacitance  
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz  
VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz  
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz  
See Test Circuit  
µS  
µS  
pF  
µV  
7.0  
1.8  
8.0  
3.0  
Noise Voltage  
NV  
IDSS RANK  
MARKING  
J32  
J33  
J34  
J35  
J36  
J37  
IDSS  
40 to 70  
60 to 110  
90 to 180  
150 to 300  
200 to 450  
300 to 600  
(µA)  
NOISE VOLTAGE TEST CIRCUIT  
+4.5 V  
JIS A  
NV (r.m.s)  
R = 1 k  
C = 10 pF  
2
Data Sheet D15940EJ1V0DS  

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