生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 200 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1030 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | SOT-186 | |
2SK1030A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-220 | |
2SK1031 | ETC |
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2SK1031-B | HITACHI |
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Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK1031-D | HITACHI |
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Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK1032 | PANASONIC |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
2SK1032A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 8A I(D) | TO-247VAR | |
2SK1033 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | SOT-186 | |
2SK1034 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-220 | |
2SK1035 | PANASONIC |
获取价格 |
SILICON N CHANNEL POWER F MOSFET |