生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.22 | 配置: | SINGLE |
最大漏极电流 (ID): | 0.005 A | FET 技术: | JUNCTION |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK1031-B | HITACHI | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction |
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2SK1031-D | HITACHI | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction |
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2SK1032 | PANASONIC | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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2SK1032A | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 8A I(D) | TO-247VAR |
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2SK1033 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | SOT-186 |
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2SK1034 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-220 |
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