Datasheet > 2SK1039

2SK1039

更新时间： 2024-11-27 01:18:19

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	67K
描述
Drain Current âID=8A@ TC=25C

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK1039 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

2SK1038

DESCRIPTION

·Drain Current –I_D=5A@ T_C=25℃

·Drain Source Voltage-

: V_DSS=400V(Min)

APPLICATIONS

·Designed for high voltage, high speed power switching

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

VALUE

400

UNIT

ARAMETER

Drain-Source Voltage (V_GS=0)

Gate-Source Voltage

±20

Drain Current-continuous@ TC=25℃

Total Dissipation@TC=25℃

Max. Operating Junction Temperature

Storage Temperature Range

P_tot

T_j

150

℃

T_stg

-55~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

0.83

UNIT

℃/W

R_{th j-c}

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-a}

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

PDF pdfFactory Pro

www.fineprint.cn

中文翻译

下载PDF

与2SK1039相关器件

型号	品牌	获取价格	描述	数据表
2SK104	NEC	获取价格	Field Effect Transistor
2SK105	INTERFET	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226
2SK105	NEC	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction
2SK1052	SANYO	获取价格	Very High-Speed Switching Applications
2SK1053	SANYO	获取价格	Very High-Speed Switching Applications
2SK1056	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1056	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1056/1057/1058	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1056\|2SK1057\|2SK1058	ETC	获取价格
2SK1056-E	RENESAS	获取价格	Silicon N Channel MOS FET