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2SJ551(L) PDF预览

2SJ551(L)

更新时间: 2024-01-02 03:56:25
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管场效应晶体管
页数 文件大小 规格书
9页 95K
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2SJ551(L) 数据手册

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2SJ551(L), 2SJ551(S)  
Reverse Drain Current vs.  
Source to Drain Voltage  
Maximum Avalanche Energy vs.  
Channel Temperature Derating  
–20  
–16  
–12  
–8  
50  
40  
30  
20  
10  
0
IAP = –18 A  
VDD = –25 V  
duty < 0.1 %  
Rg 50 Ω  
–10 V  
–5 V  
VGS = 0, 5 V  
–4  
Pulse Test  
–1.2 –1.6 –2.0  
0
0
–0.4  
–0.8  
25  
50  
75  
100  
125  
150  
Source to Drain Voltage VSD (V)  
Channel Temperature Tch (°C)  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θch – c (t) = γ s (t) • θch – c  
θch – c = 2.08°C/W, Tc = 25°C  
PW  
D =  
PDM  
T
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Avalanche Test Circuit  
Avalanche Waveform  
VDSS  
1
2
2
L
EAR  
=
• L • IAP •  
VDS  
Monitor  
VDSS – VDD  
IAP  
Monitor  
V(BR)DSS  
IAP  
Rg  
VDD  
D.U.T  
VDS  
ID  
Vin  
–15 V  
50 Ω  
VDD  
0
Rev.4.00 Sep 07, 2005 page 5 of 8  

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