2SJ551(L)

更新时间： 2024-02-12 04:48:42

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	95K
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数据手册

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2SJ551(L) 数据手册

2SJ551(L), 2SJ551(S)

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

1000

300

100

10 µs

Operation in

this area is

limited by R_{DS (on)}

0.3

0.1

Ta = 25°C

100

150

200

0.1 0.3

100

Case Temperature Tc (°C)

Drain to Source Voltage V_DS(V)

Typical Output Characteristics

–10 V

Typical Transfer Characteristics

–20

–16

–12

–8

–20

–16

–12

–8

V_DS= –10 V

Pulse Test

–6 V

–4 V

–3 V

–3.5 V

–2.5 V

25°C

Tc = 75°C

–4

V_GS= –2 V

–25°C

–2

–4

–6

–8

–10

–1

–2

–3

–4

–5

Drain to Source Voltage V_DS(V)

Gate to Source Voltage V_GS(V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

–3.0

Pulse Test

0.5

–2.5

–2.0

–1.5

–1.0

0.2

0.1

V_GS= –4 V

I_D= –20 A

0.05

–10 V

–10 A

–5 A

–0.5

0.02

0.01

–4

–8

–12

–16

–20

–1

–2

–5 –10 –20

–50 –100

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

Rev.4.00 Sep 07, 2005 page 3 of 8

1 234 5 6 7...9

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