生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 110.8 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 7 A | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.35 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 20 W | 最大脉冲漏极电流 (IDM): | 28 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ474-01L | FUJI | Power MOSFET |
获取价格 |
|
2SJ474-01L_05 | FUJI | P-CHANNEL SILICON POWER MOSFET |
获取价格 |
|
2SJ474-01S | FUJI | P-CHANNEL SILICON POWER MOSFET |
获取价格 |
|
2SJ475-01 | FUJI | FAP-III Series |
获取价格 |
|
2SJ475-01_06 | FUJI | P-CHANNEL SILICON POWER MOSFET |
获取价格 |
|
2SJ476-01 | ETC |
获取价格 |
||
2SJ476-01L | FUJI | Power MOSFET |
获取价格 |
|
2SJ476-01L_06 | FUJI | P-CHANNEL SILICON POWER MOSFET |
获取价格 |
|
2SJ476-01S | FUJI | P-CHANNEL SILICON POWER MOSFET |
获取价格 |
|
2SJ477-01MR | FUJI | Power MOSFET |
获取价格 |