Datasheet > 2SJ356-AY

2SJ356-AY

更新时间： 2024-01-02 09:44:26

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	263K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,2A I(D),TO-243

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2SJ356-AY 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ356

P-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

The 2SJ356 is a P-channel MOS FET of a vertical type and is

PACKAGE DIMENSIONS (in mm)

a switching element that can be directly driven by the output of an

IC operating at 5 V.

4.5 ±0.1

1.6 ±0.2

This product has a low ON resistance and superb switching

characteristics and is ideal for driving the actuators and DC/DC

converters.

1.5 ±0.1

FEATURES

0.42

±0.06

0.47

•

Can be directly driven by 5-V IC

1.5

+0.03

±0.06

0.41

–0.05

Low ON resistance

3.0

R^DS(on)= 0.95 Ω MAX. @VGS = –4 V, ID = –1.0 A

R^DS(on)= 0.50 Ω MAX. @VGS = –10 V, ID = –1.0 A

EQUIVALENT CIRCUIT

Drain (D)

Internal

diode

PIN CONNECTIONS

S: Source

Gate (G)

D: Drain

G: Gate

Gate

protection

diode

Source (S)

Marking: PR

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

SYMBOL

VDSS

TEST CONDITIONS

RATING

–60

UNIT

VGS = 0

VDS = 0

VGSS

–20/+10

±2.0

ID(DC)

Drain Current (Pulse)

ID(pulse)

PW ≤ 10 ms

±4.0

Duty cycle ≤ 1 %

Total Power Dissipation

Channel Temperature

Storage Temperature

16 cm²× 0.7 mm, ceramic substrate used

2.0

Tch

Tstg

150

˚C

–55 to +150

˚C

The internal diode connected between the gate and source of this product is to protect the product from static

electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect

a protection circuit.

Take adequate preventive measures against static electricity when handling this product.

The information in this document is subject to change without notice.

Document No. D11218EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

1 234 5 6 7 8

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