Datasheet > 2SJ358C

2SJ358C

更新时间： 2022-02-26 12:10:59

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
8页	209K
描述
P-CHANNEL MOSFET FOR SWITCHING

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2SJ358C 数据手册

Preliminary Data Sheet

2SJ358C

P-CHANNEL MOSFET FOR SWITCHING

R07DS1262EJ0300

Rev.3.00

Aug 17, 2015

Description

The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven

directly by a 4.0 V power source.

Features

 Directly driven by a 4.0 V power source.

 Low on-state resistance

R^DS(on)1= 143 m  MAX. (VGS = -10 V, ID = -2.0 A)

R^DS(on)2= 179 m MAX. (VGS = -4.5 V, ID = -2.0 A)

R^DS(on)3= 190 m MAX. (VGS = -4.0 V, ID = -2.0 A)

Ordering Information

Part Number

Lead Plating

Packing

Package

2SJ358C-T1-AZ/AY

-AZ : Sn-Bi , -AY : Pure Sn

1000p/Reel

SC-84 (MP-2)

Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.

Marking XT1

Absolute Maximum Ratings (T^A= 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC)

VDSS

VGSS

ID(DC)

ID(pulse)

-60

∓20

∓3.5

Drain Current (pulse) ^Note1

∓14

Total Power Dissipation ^Note2

Channel Temperature

2.0

C

Tch

150

Storage Temperature

Tstg

55 to 150

Note1 PW  10 s, Duty Cycle  1%

Note2 16 cm²X 0.7mm, ceramic substrate used

R07DS1262EJ0300 Rev.3.00

Aug 17, 2015

Page 1 of 6

12 3 4 5 6 7 8

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2SJ358-T2	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,3A I(D),SOT-89VAR	获取价格
2SJ358-T2-AZ	RENESAS	3000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, COMPACT, MP-2, 3 PIN	获取价格