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2SJ358-T2 PDF预览

2SJ358-T2

更新时间: 2024-01-01 21:00:19
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
8页 282K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,3A I(D),SOT-89VAR

2SJ358-T2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.32
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ358-T2 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1010  
Rectronics Corporation  
Issued by: Renesas Electronics Corporation (m)  
Send any inquiries to http://www.renesas.c

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