2SJ361

更新时间： 2024-02-03 10:53:25

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2SJ361 数据手册

2SJ361

Silicon P-Channel MOS FET

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

2.5 V gate drive device can be driven from 3 V source

Outline

UPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...9

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型号	品牌	描述	获取价格	数据表
2SJ361RY	HITACHI	2A, 20V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET	获取价格
2SJ361RYTL	HITACHI	Power Field-Effect Transistor, 2A I(D), 20V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-	获取价格
2SJ361RYTR	HITACHI	Power Field-Effect Transistor, 2A I(D), 20V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-	获取价格
2SJ361RYUL	HITACHI	2A, 20V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET	获取价格
2SJ361RYUR	HITACHI	暂无描述	获取价格
2SJ361TR	HITACHI	Small Signal Field-Effect Transistor, UPAK-3	获取价格