2SJ361

更新时间： 2024-02-28 18:52:45

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
9页	45K
描述
Silicon P-Channel MOS FET

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数据手册

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2SJ361 数据手册

2SJ361

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V_(BR)DSS–20

—

I_D= –10 mA, V_GS= 0

Gate to source breakdown

voltage

V_(BR)GSS±20

—

I_G= ±100 µA, V_DS= 0

Gate to source leak current

I_GSS

—

±10

–10

–1.5

0.4

1.5

—

µA

V_GS= ±16 V, V_DS= 0

V_DS= –16 V, V_GS= 0

I_D= –1 mA, V_DS= –10 V

I_D= –1 A, V_GS= –10 V

I_D= –0.4 A, V_GS= –2.5 V

I_D= –1 A, V_DS= –10 V

V_DS= –10 V, V_GS= 0,

f = 1 MHz

Zero gate voltage drain current I_DSS

—

Gate to source cutoff voltage

Static drain to source on state R_DS(on)

resistance

V_GS(off)

–0.5

—

0.28

0.85

0.3

Ω

—

Ω

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

|y_fs|

Ciss

Coss

Crss

t_d(on)

t_r

0.15

—

3.2

—

130

0.6

—

350

1650

7280

6950

–1.0

—

I_D= –1 A, V_GS= –10 V,

—

R_L= 10 Ω

Turn-off delay time

Fall time

t_d(off)

t_f

—

Body to drain diode forward

voltage

V_DF

—

I_F= –2 A, V_GS= 0

Body to drain diode reverse

recovery time

t_rr

—

530

—

I_F= –2 A, V_GS= 0,

di_F/dt = 20 A/µs

Note: 1. Pulse test

1 234 5 6 7...9

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