2SJ357

更新时间： 2024-01-10 02:29:00

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管
页数	文件大小	规格书
8页	67K
描述
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

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2SJ357 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ357

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

The 2SJ357 is a P-channel vertical MOS FET that can be

Package Drawings (unit: mm)

used as a switching element. The 2SJ357 can be directly

driven by an IC operating at 5 V.

5.7 ±0.1

2.0 ±0.2

1.5 ±0.1

The 2SJ357 features a low on-resistance and excellent

switching characteristics, and is suitable for applications

such as actuator driver and DC/DC converter.

FEATURES

•

New-type compact package

0.5 ±0.1

0.4 ±0.05

2.1

Has advantages of packages for small signals and for

power transistors, and compensates those disadvan-

tages

0.85 ±0.1

4.2

Equivalent Circuit

•

Can be directly driven by an IC operating at 5 V.

Low on-resistance

Drain (D)

Electrode Connection

1. Source

Internal 2. Drain

RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5 A

R^DS(ON)= 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A

Gate (G)

Diode

3. Gate

Gate Protect

Diode

QUALITY GRADE

Standard

Marking: UA1

Source (S)

Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by

NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)

Parameter

Symbol

VDSS

Conditions

Ratings

–30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

VGS = 0

VDS = 0

VGSS

–20/+10

–/+3.0

–/+6.0

ID(DC)

ID(pulse)

PW ≤ 10 ms

Duty Cycle ≤ 1 %

Total Power Loss

Tch

Tstg

Mounted on ceramic board of 7.5 cm × 0.7 mm

2.0

150

°C

Channel Temperature

Storage Temperature

–55 to +150

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

The information in this document is subject to change without notice.

Document No. D10803EJ3V0DS00 (3rd edition)

(Previous No. TC-2490)

Date Published January 1999 N CP(K)

Printed in Japan

1994

12 3 4 5 6 7 8

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