Datasheet > 2SJ358-AZ

2SJ358-AZ

更新时间： 2024-01-21 02:31:54

品牌	Logo	应用领域
日电电子 - NEC		开关脉冲晶体管
页数	文件大小	规格书
6页	97K
描述
Power Field-Effect Transistor, 3A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-2, 3 PIN

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2SJ358-AZ 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.31
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	3 A
最大漏源导通电阻：	0.4 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-F3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	6 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SJ358-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ358

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

Package Drawings (unit: mm)

The 2SJ358 is a P-channel vertical MOS FET that can

5.7 ±±.ꢀ

2.± ±±.2

be used as a switching element. The 2SJ358 can be

directly driven by an IC operating at 5 V.

ꢀ.5 ±±.ꢀ

The 2SJ358 features a low on-resistance and excellent

switching characteristics, and is suitable for applications

such as actuator driver and DC/DC converter.

ꢀ

±.5 ±±.ꢀ

FEATURES

±.4 ±±.±5

2.ꢀ

±.85 ±±.ꢀ

4.2

•

New-type compact package

Has advantages of packages for small signals and for

power transistors, and compensates those disadvan-

tages

Equivalent Circuit

Drain (D)

•

Can be directly driven by an IC operating at 5 V.

Low on-resistance

Electrode Connection

ꢀ. Source

Internal 2. Drain

RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A

R^DS(ON)= 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A

Gate (G)

Diode

3. Gate

Gate Protect

Diode

QUALITY GRADE

Marking: UA2

Source (S)

Standard

Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by

NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = +25 ˚C)

Parameter

Symbol

VDSS

Conditions

Ratings

–60

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

VGS = 0

VDS = 0

VGSS

–20/+10

–/+3.0

–/+6.0

ID(DC)

ID(pulse)

PW ≤ 10 ms

Duty Cycle ≤ 1 %

Total Power Loss

P_T

Tch

Tstg

Mounted on ceramic board of 7.5 cm × 0.7 mm

2.0

150

˚C

Channel Temperature

Storage Temperature

–55 to +150

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device is actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

The information in this document is subject to change without notice.

Document No. TC-2491

(O.D. No. TC-8011)

Date Published October 1994 P

Printed in Japan

1994

12 3 4 5 6

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