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2SJ185-L-A PDF预览

2SJ185-L-A

更新时间: 2024-02-03 01:13:06
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 353K
描述
TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346

2SJ185-L-A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):0.1 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

2SJ185-L-A 数据手册

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2SJ185  
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