Datasheet > 2SD999

2SD999

更新时间： 2024-09-15 07:31:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	337K
描述
TRANSISTOR(NPN)

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中文翻译

获取价格

数据手册

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2SD999 数据手册

2SD999

TRANSISTOR (NPN)

SOT-89-3L

FEATURES

Low Collector-Emitter Saturation Voltage

Mini Power Type Package

1. BASE

2. COLLECTOR

3. EMITTER

Excellent DC Current Gain Linearity

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

250

150

-55~+150

℃/W

℃

R_θJA

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100µA,I_E=0

I_C=1mA,I_B=0

I_E=100µA,I_C=0

V_CB=30V,I_E=0

0.1

400

µA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

h_FE(1)

V_CE=1V, I_C=100mA

V_CE=1V, I_C=1A

I_C=1A,I_B=0.1A

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base -emitter voltage

V_CE(sat)

0.4

1.2

0.7

V_BE(sat)

I_C=1A,I_B=0.1A

V_BE

f_T

V_CE=6V, I_C=10mA

V^CE=6V,I^C=10mA

V_CB=6V, I_E=0, f=1MHz

0.6

130

MHz

Transition frequency

Collector output capacitance

C_ob

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE

（

）

RANK

RANGE

90–180

135–270

200–400

MARKING

JinYu

semiconductor

www.htsemi.com

中文翻译

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与2SD999相关器件

型号	品牌	获取价格	描述	数据表
2SD999-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,25V V(BR)CEO,1A I(C),SOT-89
2SD999CK	ETC	获取价格	BJT
2SD999CK-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,25V V(BR)CEO,1A I(C),SOT-89
2SD999CK-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI
2SD999CK-T1-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,25V V(BR)CEO,1A I(C),SOT-89
2SD999CK-T1-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI
2SD999CK-T2	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI
2SD999CK-T2-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,25V V(BR)CEO,1A I(C),SOT-89
2SD999CK-T2-AZ	NEC	获取价格	1000mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN
2SD999CL	ETC	获取价格	BJT