是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | POWER, MINIMOLD PACKAGE-3 | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 90 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 功耗环境最大值: | 2 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 130 MHz |
VCEsat-Max: | 0.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD999CM-AY | RENESAS |
获取价格 |
暂无描述 | |
2SD999CM-AZ | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI | |
2SD999CM-T1-AY | RENESAS |
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TRANSISTOR,BJT,NPN,25V V(BR)CEO,1A I(C),SOT-89 | |
2SD999CM-T1-AZ | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI | |
2SD999CM-T2 | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI | |
2SD999CM-T2-AZ | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI | |
2SD999-T1 | RENESAS |
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1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN | |
2SD999-T1CL | RENESAS |
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Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
2SD999-T1CM | RENESAS |
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Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
2SD999-T2CL | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL |