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2SD965 PDF预览

2SD965

更新时间: 2024-01-19 23:00:45
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管开关
页数 文件大小 规格书
2页 42K
描述
Silicon NPN epitaxial planer type(For low-frequency power amplification)

2SD965 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.61Base Number Matches:1

2SD965 数据手册

 浏览型号2SD965的Datasheet PDF文件第2页 
Transistor  
2SD965  
Silicon NPN epitaxial planer type  
For low-frequency power amplification  
For stroboscope  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
Low collector to emitter saturation voltage VCE(sat)  
.
Satisfactory operation performances at high efficiency with the  
low-voltage power supply.  
Absolute Maximum Ratings (Ta=25˚C)  
0.45+00..12  
0.45+00..12  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
40  
1.27  
1.27  
20  
V
7
V
1 2 3  
1:Emitter  
2:Collector  
3:Base  
8
5
A
IC  
A
2.54±0.15  
JEDEC:TO–92  
EIAJ:SC–43A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
0.75  
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
Unit  
VCB = 10V, IE = 0  
µA  
µA  
µA  
V
Collector cutoff current  
ICEO  
VCE = 10V, IB = 0  
1.0  
Emitter cutoff current  
IEBO  
VEB = 7V, IC = 0  
0.1  
Collector to emitter voltage  
Emitter to base voltage  
VCEO  
VEBO  
IC = 1mA, IB = 0  
20  
7
IE = 10µA, IC = 0  
V
*1  
hFE1  
hFE2  
VCE = 2V, IC = 0.5A*2  
VCE = 2V, IC = 2A*2  
IC = 3A, IB = 0.1A*2  
VCB = 6V, IE = –50mA, f = 200MHz  
VCB = 20V, IE = 0, f = 1MHz  
230  
150  
600  
1
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
V
MHz  
pF  
Transition frequency  
fT  
150  
Collector output capacitance  
Cob  
50  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
230 ~ 380  
340 ~ 600  
1

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