Datasheet > 2SD965A

2SD965A

更新时间： 2023-12-06 20:07:36

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	728K
描述
双极型晶体管

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2SD965A 数据手册

2SD965A

SOT-89 Transistor(NPN)

1. BASE

SOT-89

2. COLLECTOR

3. EMITTER

4.6

4.4

1.6

1.4

1.8

1.4

2.6

4.25

2.4

3.75

Features

0.8

MIN

Audio amplifier

0.53

0.40

2x)

0.48

0.35

1.5

0.44

0.37

Flash unit of camera

Switching circuit

0.13

3.0

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

750

150

-55-150

℃

T_J

Storage Temperature

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=0.1mA, I_E=0

V_(BR)CEOI_C= 1mA. I_B=0

V_(BR)EBOI_E= 10μA, I_C=0

I_CBO

I_EBO

V_CB= 10V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=7V, I_C=0

h_FE(1)

h_FE’(2)

h_FE(3)

V_CE(sat)

f_T

V_CE= 2 V, I_C=1mA

V_CE= 2V, I_C= 500mA

V_CE= 2V, I_C=2A

200

150

DC current gain

230

150

800

Collector-emitter saturation voltage

Transition frequency

I_C=3A, I_B=0.1A

V_CE=6V, I_C=50mA

V_CB=20 V , I_E=0, f=1MH_Z

MHz

Out capacitance

Cob

CLASSIFICATION OF h_FE(2)

Rank

Range

230-380

340-600

560-800

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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