Datasheet > 2SD965_15

2SD965_15

更新时间： 2024-01-25 00:26:54

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1250K
描述
NPN Transistors

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中文翻译

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数据手册

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2SD965_15 数据手册

SMD Type

Transistors

NPN Transistors

2SD965

1.70 0.1

■ Features

● Low Collector-Emitter Saturation Voltage

● Large Collector Power Dissipation and Current

● Mini Power Type Package

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

750

167

150

℃/W

RθJA

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I

E= 0

C= 0

CBO

EBO

CB= 10 V , I

^EB= 7V , I

= 0

100

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=3 A, I

=100mA

=3 A, I

1.2

FE(1)

FE(2)

FE(3)

^CE= 2V, I

CE= 2V, I

= 1mA

= 500mA

= 2A

200

150

DC current gain

230

150

950

Collector output capacitance

Transition frequency

CB= 20V, I

E= 0,f=1MHz

^CE= 6V, I = 50mA,f=200MHz

MHz

■ Classification of hfe(2)

Type

Range

Marking

2SD965-Q

230-380

965Q

2SD965-R

340-600

965R

2SD965-S

560-800

965S

2SD965-T

560-950

965T

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