JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SD965A TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
z
Audio amplifier
Flash unit of camera
Switching circuit
MARKING
D965A
Solid dot = Green molding compound device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Unit
40
V
30
V
7
V
Collector Current -Continuous
5
A
Collector Power Dissipation
PC
750
mW
Thermal Resistance From
RθJA
167
℃/W
Junction
To Ambient
Operation Junction and
Storage Temperature Range
TJ,Tstg
℃
-55~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
40
30
7
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=0.1mA, IE=0
V(BR)CEO IC= 1mA. IB=0
V(BR)EBO IE= 10μA, IC=0
V
V
ICBO
IEBO
VCB= 10V,IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=7V, IC=0
hFE(1)
hFE’(2)
hFE(3)
VCE(sat)
fT
VCE= 2 V, IC=1mA
VCE= 2V, IC = 500mA
VCE= 2V, IC =2A
200
150
DC current gain
230
150
800
1
Collector-emitter saturation voltage
Transition frequency
IC=3A, IB=0.1A
V
VCE=6V, IC=50mA
VCB=20 V , IE=0, f=1MHZ
MHz
pF
Out capacitance
Cob
50
CLASSIFICATION OF hFE(2)
Rank
Q
R
S
Range
230-380
340-600
560-800
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1
Rev. - 2.3