Transistor
2SD0958 (2SD958)
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification
Complementary to 2SB0788 (2SB788)
Unit: mm
6.9 0.1
2.5 0.1
1.0
1.5
1.5 R0.9
Features
High collector to emitter voltage VCEO
I
G
R0.9
.
G
Low noise voltage NV.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R0.7
0.85
0.55 0.1
0.45 0.05
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
3
2
1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
120
120
V
2.5
2.5
7
50
V
mA
mA
mW
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
IC
20
Collector power dissipation
Junction temperature
Storage temperature
PC
400
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
1
Unit
nA
µA
V
Collector cutoff current
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCB = 50V, IE = 0
ICEO
VCE = 50V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
VCBO
VCEO
VEBO
120
120
7
V
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
IC = 20mA, IB = 2mA
V
*
hFE
180
700
0.6
Collector to emitter saturation voltage VCE(sat)
V
Transition frequency
fT
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 40V, IC = 2mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
200
MHz
Noise voltage
NV
150
mV
*hFE Rank classification
Rank
hFE
R
S
T
180 ~ 360
260 ~ 520
360 ~ 700
Note.) The Part number in the Parenthesis shows conventional part number.
1