Datasheet > 2SD965

2SD965

更新时间： 2023-12-06 20:00:54

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	265K
描述
小信号晶体管

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2SD965 数据手册

2SD965

NPN Silicon Epitaxial Planar Transistor

Features

• The transistor is subdivided into Four groups

P, Q, R and S, according to its DC current gain

• On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Applications

• Low-frequency power and stroboscope applications.

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current

Power Dissipation

I_CP

P_tot

750

150

℃

Junction Temperature

Storage Temperature Range

T_j

T_stg

- 55 to + 150

℃

Thermal Characteristics

Symbol

R_θJA

Max.

167

Unit

Parameter

Thermal Resistance from Junction to Ambient

℃/W

1 / 5

Dated: 21/02/2023 CL Rev: 04

12 3 4 5

中文翻译

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