Datasheet > 2SD961

2SD961

更新时间： 2024-01-01 02:51:13

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	233K
描述
Silicon NPN Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD961 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD961

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 80V(Min)

·Good Linearity of h_FE

·Low Collector Saturation Voltage

: V_CE(sat)= 0.5V(Max)@I_C= 4A

·Complement to Type 2SB869

APPLICATIONS

·Designed for power switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

130

Collector Current-Continuous

Collector Current-Peak

I_CM

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与2SD961相关器件

型号	品牌	获取价格	描述	数据表
2SD965	Wing Shing	获取价格	TRANSISTOR (NPN)
2SD965	UTC	获取价格	LOW VOLTAGE HIGH CURRENT TRANSISTOR
2SD965	TYSEMI	获取价格	Satisfactory operation performances at high efficiency with the lowvoltage power supply.
2SD965	HTSEMI	获取价格	TRANSISTOR(NPN)
2SD965	KEXIN	获取价格	Silicon NPN epitaxial planar type
2SD965	WEITRON	获取价格	NPN Transistor
2SD965	SUNTAC	获取价格	Silicon NPN epitaxial planar type
2SD965	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SD965	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SD965	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For low-frequency power amplification)