Datasheet > 2SD965

2SD965

更新时间： 2024-01-25 11:45:58

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管开关
页数	文件大小	规格书
1页	334K
描述
TRANSISTOR(NPN)

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中文翻译

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数据手册

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2SD965 数据手册

2SD965

SOT-89-3L

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Low Collector-Emitter Saturation Voltage

Large Collector Power Dissipation and Current

Mini Power Type Package

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

750

167

150

-55~+150

℃/W

℃

R_θJA

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100µA,I_E=0

I_C=1mA,I_B=0

I_E=10µA,I_C=0

V_CB=10V,I_E=0

0.1

µA

Emitter cut-off current

I_EBO

V_EB=7V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

f_T

V_CE=2V, I_C=1mA

V_CE=2V, I_C=500mA

V_CE=2V, I_C=2A

200

150

DC current gain

230

150

800

Collector-emitter saturation voltage

Transition frequency

I_C=3A,I_B=0.1A

VCE=6V,IC=50mA，f=200MHz

V_CB=20V, I_E=0, f=1MHz

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

（

）

RANK

RANGE

230–380

340–600

560–800

JinYu

semiconductor

www.htsemi.com

中文翻译

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