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2SD596 PDF预览

2SD596

更新时间: 2024-02-19 13:34:13
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管光电二极管放大器
页数 文件大小 规格书
3页 629K
描述
TRANSISTOR (NPN)

2SD596 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.39最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e6元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):170 MHzBase Number Matches:1

2SD596 数据手册

 浏览型号2SD596的Datasheet PDF文件第2页浏览型号2SD596的Datasheet PDF文件第3页 
2SD596  
TRANSISTOR (NPN)  
FEATURES  
SOT-23  
z
High DC Current gain.  
z
Complimentary to 2SB624  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
1.BASE  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
30  
Units  
V
2.EMITTER  
3.COLLECTOR  
25  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
700  
200  
150  
-55-150  
mA  
mW  
PC  
Tj  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
30  
25  
5
V
V
IC=100μA, IE=0  
IC= 1mA, IB=0  
V
IE= 100μA, IC=0  
VCB=30V , IE=0  
0.1  
0.1  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB= 5V , IC=0  
hFE(1)  
*
*
VCE= 1V, IC= 100mA  
VCE=1V, IC= 700mA  
IC=700mA, IB=70mA  
VCE=6V, IC=10mA  
110  
50  
400  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
*
0.6  
0.7  
V
V
VBE  
*
0.6  
Transition frequency  
V
CE=6V, IC= 10mA  
170  
MHz  
pF  
fT  
Collector Output Capacitance  
Cob  
VCB=6V,IE=0,f=10MHZ  
12  
* Pulse test : Pulse width 350μs,Duty Cycle2%.  
CLASSIFICATION OF hFE  
(1)  
DV1  
DV2  
DV3  
DV4  
200-320  
DV5  
250-400  
Marking  
Range  
110-180  
135-220  
170-270  
1
JinYu  
semiconductor  
www.htsemi.com  

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