5秒后页面跳转
2SD596ADV3-E1B PDF预览

2SD596ADV3-E1B

更新时间: 2024-01-02 13:43:38
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
4页 535K
描述
TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),SOT-346

2SD596ADV3-E1B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
最大集电极电流 (IC):0.7 A配置:Single
最小直流电流增益 (hFE):170最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

2SD596ADV3-E1B 数据手册

 浏览型号2SD596ADV3-E1B的Datasheet PDF文件第2页浏览型号2SD596ADV3-E1B的Datasheet PDF文件第3页浏览型号2SD596ADV3-E1B的Datasheet PDF文件第4页 
DATA SHEET  
SILICON TRANSISTOR  
2SD596A  
AUDIO FREQUENCY POWER AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
MINI MOLD  
FEATURES  
Complementary to NEC 2SB624 PNP Transistor.  
High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)  
PACKAGE DRAWING  
(Unit: mm)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Total Power Dissipation  
Junction Temperature  
VCBO  
VCEO  
VEBO  
IC  
PT  
Tj  
30  
25  
5.0  
700  
200  
150  
V
V
V
mA  
mW  
°C  
Storage Temperature Range  
Tstg  
55 to +150 °C  
1. Emitter  
2. Base  
3. Collector  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
SYMBOL  
ICBO  
MIN.  
TYP.  
MAX.  
100  
UNIT  
nA  
TEST CONDITIONS  
VCB = 30 V, IE = 0 A  
VEB = 5.0 V, IC = 0 A  
VCE = 1.0 V, IC = 100 mA Note  
VCE = 1.0 V, IC = 700 mA Note  
IC = 700 mA, IB = 70 mA Note  
VCE = 6.0 V, IC = 10 mA Note  
VCE = 6.0 V, IE = 10 mA  
IEBO  
100  
nA  
hFE1  
110  
50  
200  
400  
hFE2  
Collector Saturation Voltage  
Base to Emitter Voltage  
Gain Bandwidth Product  
Output Capacitance  
VCE(sat)  
VBE  
0.22  
640  
170  
12  
0.6  
V
600  
700  
mV  
MHz  
pF  
fT  
Cob  
VCB = 6.0 V, IE = 0 A, f = 1.0 MHz  
Note Pulsed: PW 350 μs, Duty Cycle 2%  
hFE1 CLASSIFICATION  
Marking  
DV1  
DV2  
DV3  
170 to 270  
DV4  
DV5  
250 to 400  
hFE  
110 to 180  
135 to 220  
200 to 320  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17880EJ1V0DS00 (1st edition)  
Date Published December 2005 NS CP(K)  
Printed in Japan  
c
2005  

与2SD596ADV3-E1B相关器件

型号 品牌 描述 获取价格 数据表
2SD596ADV3-E1B-AT NEC TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),SOT-346

获取价格

2SD596A-DV4 NEC Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, MINI MO

获取价格

2SD596ADV4-E1B-AT NEC TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),SOT-346

获取价格

2SD596ADV4-E2B NEC TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),SOT-346

获取价格

2SD596ADV4-E2B-AT NEC TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),SOT-346

获取价格

2SD596A-DV5 NEC Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, MINI MO

获取价格