Datasheet > 2SD596DV2-T

2SD596DV2-T

更新时间： 2024-01-16 03:24:21

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
2页	293K
描述
Transistor

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2SD596DV2-T 数据手册

RECTRON

TECHNICAL SPECIFICATION

SEMICONDUCTOR

2SD596

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

FEATURES

* Power dissipation

PCM :

0.2

0.7

W (Tamb=25^OC)

Collector current

ICM :

Collector-base voltage

(BR)CBO

SOT-23

Operating and storage junction temperature range

T ,Tstg: -55^OC to +150^OC

COLLECTOR

0.055(1.40)

0.047(1.20)

BASE

MECHANICAL DATA

* Case: Molded plastic

EMITTER

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

0.006(0.15)

0.003(0.08)

0.043(1.10)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

* Weight: 0.008 gram

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.019(2.00)

0.071(1.80)

0.118(3.00)

0.110(2.80)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^OC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )

CHARACTERISTICS

Collector-base breakdown voltage (I = 100µA, I =0)

SYMBOL

MIN

TYP

MAX

UNITS

(BR)CBO

(BR)CEO

(BR)EBO

Collector-emitter breakdown voltage (I = 1mA, I =0)

Emitter-base breakdown voltage (I = 100µA, I =0)

µA

Collector cut-off current (V = 30V, I =0)

0.1

CBO

Emitter cut-off current (V = 5V, I =0)

µA

EBO

110

400

DC current gain (V = 1V, I = 100mA)

FE(1)

DC current gain (V = 1V, I = 700mA)

FE(2)

Collector-emitter saturation voltage (I = 700mA, I = 70mA)

CE(sat)

0.6

0.7

Base-emitter voltage (V = 6V, I = 10mA)

BE(on)

0.6

140

Transition frequency (V = 6V, I = 10mA)

MHz

Pulse teat: Pulse width <350µs, Duty Cycle <2%.

CLASSIFICATION OF h

DV5

250-400

2006-3

DV3

170-270

DV2

DV4

RANK

Range

DV1

110-180

135-220

200-320

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