Datasheet > 2SD596ADV5-E1B

2SD596ADV5-E1B

更新时间： 2024-09-24 09:46:51

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
4页	535K
描述
TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),SOT-346

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2SD596ADV5-E1B 数据手册

DATA SHEET

SILICON TRANSISTOR

2SD596A

AUDIO FREQUENCY POWER AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

• Complementary to NEC 2SB624 PNP Transistor.

• High DC Current Gain: h^FE= 200 TYP. (VCE = 1.0 V, IC = 100 mA)

PACKAGE DRAWING

(Unit: mm)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Total Power Dissipation

Junction Temperature

VCBO

V^CEO

V^EBO

I^C

P^T

T^j

5.0

700

200

150

°C

Storage Temperature Range

T^stg

−55 to +150 °C

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

MIN.

TYP.

MAX.

100

UNIT

TEST CONDITIONS

VCB = 30 V, IE = 0 A

VEB = 5.0 V, IC = 0 A

VCE = 1.0 V, IC = 100 mA ^Note

VCE = 1.0 V, IC = 700 mA ^Note

IC = 700 mA, IB = 70 mA ^Note

VCE = 6.0 V, IC = 10 mA ^Note

VCE = 6.0 V, IE = −10 mA

IEBO

100

hFE1

110

200

400

h^FE2

Collector Saturation Voltage

Base to Emitter Voltage

Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE

0.22

640

170

0.6

600

700

MHz

Cob

VCB = 6.0 V, IE = 0 A, f = 1.0 MHz

Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%

h^FE1CLASSIFICATION

Marking

DV1

DV2

DV3

170 to 270

DV4

DV5

250 to 400

hFE

110 to 180

135 to 220

200 to 320

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17880EJ1V0DS00 (1st edition)

Date Published December 2005 NS CP(K)

Printed in Japan

2005

12 3 4

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