Datasheet > 2SD596-DV1-HF

2SD596-DV1-HF

更新时间： 2024-09-24 01:03:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1377K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD596-DV1-HF 数据手册

SMD Type

Transistors

NPN Transistors

2SD596-HF

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High DC Current gain.

● Complimentary to 2SB624-HF

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

700

200

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100μA， I

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

= 0

CBO

EBO

CB= 30 V , I

^EB= 5V , I

= 0

100

0.6

1.2

0.7

400

Collector-emitter saturation voltage

(Note.1)

CE(sat)

BE(sat)

=700 mA, I

=70mA

Base - emitter saturation voltage

C=700 mA, I

Base - emitter voltage

DC current gain

^CE= 6V, I

CE= 1V, I

CB= 6V, I

^CE= 6V, I

= 10mA

0.6

110

hFE(1)

= 100mA

= 700mA

(Note.1)

hFE(2)

Collector output capacitance

Transition frequency

Cob

E= 10mA , f=10MHz

C= 10mA

170

MHz

Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■ Classification of hfe(1)

Type

Range

Marking

2SD596-DV1-HF

110-180

2SD596-DV2-HF

135-220

2SD596-DV3-HF

170-270

2SD596-DV4-HF

200-320

2SD596-DV5-HF

250-400

DV1

DV2

DV3

DV4

DV5

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