Datasheet > 2SD2386C

2SD2386C

更新时间： 2024-01-24 17:21:10

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	168K
描述
TRANSISTOR 7 A, 140 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

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技术参数
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2SD2386C 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.26
Is Samacsys：	N	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	7 A	集电极-发射极最大电压：	140 V
配置：	DARLINGTON WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	15000
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	70 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	30 MHz	Base Number Matches：	1

2SD2386C 数据手册

2SD2386

RESTRICTIONS ON PRODUCT USE

030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of

TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced

and sold, under any law and regulations.

2004-07-07

1 2 34

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与2SD2386C相关器件

型号	品牌	描述	获取价格	数据表
2SD2386-C	TOSHIBA	TRANSISTOR 7 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe	获取价格
2SD2387	TOSHIBA	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)	获取价格
2SD2387A	ETC	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR	获取价格
2SD2387-A	TOSHIBA	暂无描述	获取价格
2SD2387B	ETC	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR	获取价格
2SD2387-B	TOSHIBA	TRANSISTOR 8 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe	获取价格
2SD2387C	ETC	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR	获取价格
2SD2387-C	TOSHIBA	TRANSISTOR 8 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe	获取价格
2SD2388	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	获取价格
2SD2388A	ETC	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 90V V(BR)CEO \| 3A I(C) \| SIP	获取价格
2SD2388B	ETC	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 90V V(BR)CEO \| 3A I(C) \| SIP	获取价格
2SD2388C	ETC	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 90V V(BR)CEO \| 3A I(C) \| SIP	获取价格
2SD2388T105	ROHM	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3	获取价格
2SD2388T105B	ROHM	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3	获取价格
2SD2389	ISC	Silicon NPN Darlington Power Transistors	获取价格
2SD2389	SANKEN	Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)	获取价格
2SD2389	SAVANTIC	Silicon NPN Darlington Power Transistors	获取价格
2SD2389_01	SANKEN	Silicon NPN Triple Diffused Planar Transistor	获取价格
2SD2389O	ISC	Transistor	获取价格
2SD2389O	SANKEN	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,	获取价格

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