Datasheet > 2SD2164-M

2SD2164-M

更新时间： 2024-01-20 16:03:14

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	128K
描述
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FULL PACK-3

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中文翻译

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技术参数
数据手册

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2SD2164-M 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.23
外壳连接：	ISOLATED	最大集电极电流 (IC)：	3 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	800	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	110 MHz	Base Number Matches：	1

2SD2164-M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SD2164

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SD2164 is a single power transistor developed especially

for high h^FE. This transistor is ideal for simplifying drive circuits and

reducing power dissipation because its h^FEis as high as that of

Darlington transistors, but it is a single transistor.

In addition, this transistor features a small resin insulated

package, thus contributing to high-density mounting and mounting

cost reduction.

FEATURES

• High h^FEand low V^CE(sat):

h^FE≅ 1,300 TYP. (V^CE= 5.0 V, I^C= 0.5 A)

V^CE(SAT)≅ 0.3 V TYP. (I^C= 2.0 A, I^B= 20 mA)

• Full mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

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ꢌꢍꢈꢎꢏꢐꢂ

Parameter

Symbol

V^CBO

Ratings

Unit

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ꢒꢍꢈꢀꢓꢋꢄꢄꢂꢅ

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CEO

V^EBO

7.0

I^C(DC)

3.0

I^C(pulse)

5.0^Note

I^B(DC)

0.5

P^T(T^C= 25°C)

P^T(T^A= 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

Note PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15606EJ3V0DS00 (3rd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SD2164-M相关器件

型号	品牌	获取价格	描述	数据表
2SD2164-M-AZ	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2164TV2/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2164TV2/RS	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2164TV2/S	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2164TV3/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2164TV3/QS	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2164TV3/RS	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2164TV3/S	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2164TV4/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2164TV4/R	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

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