生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 180 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2147C6/S | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
2SD2147Q | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2147R | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2147S | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2148 | ISC |
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Silicon NPN Power Transistors | |
2SD2148 | SAVANTIC |
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Silicon NPN Power Transistors | |
2SD2150 | ROHM |
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Low Frequency Transistor(20V, 3A) | |
2SD2150 | TYSEMI |
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Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. | |
2SD2150 | CJ |
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TRANSISTOR NPN) | |
2SD2150 | SECOS |
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NPN Plastic-Encapsulate Transistor |