Datasheet > 2SD2150

2SD2150

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	597K
描述
SOT-89

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中文翻译

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数据手册

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2SD2150 数据手册

2SD2150

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to 2SB1424

 Excellent h_FELinearity

 Low Collector-Emitter Saturation Voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

Value

Unit

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

Collector Current

Collector Power Dissipation

500

150

°C

Junction Temperature

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =50uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

，

V(BR)CEO

V(BR)EBO

I_CBO

I_C=1mA，I_B=0

I_E=50uA，I_C=0

V_CB=30V, I_E=0

0.1

560

0.5

Emitter cut-off current

I_EBO

uA V_EB=5V, I_C=0

V_CE=2V, I_C=100mA

I_C=2A，I_B=100mA

DC current gain

h_FE*

180

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T*

V_CE=2V, I_C=0.5A, f=100

290

MHz

V_CB=10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

*Pulse test: pulse width≤300uS,cycle duty≤2%.

CLASSIFICATION OF h_FE

Rank

Range

180-390

CFR

270-560

CFS

Marking

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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中文翻译

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