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2SD2123L PDF预览

2SD2123L

更新时间: 2024-09-23 06:17:27
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管放大器
页数 文件大小 规格书
8页 148K
描述
Silicon NPN Epitaxial

2SD2123L 技术参数

生命周期:Obsolete包装说明:DPAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.45
外壳连接:COLLECTOR最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN最大功率耗散 (Abs):18 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

2SD2123L 数据手册

 浏览型号2SD2123L的Datasheet PDF文件第2页浏览型号2SD2123L的Datasheet PDF文件第3页浏览型号2SD2123L的Datasheet PDF文件第4页浏览型号2SD2123L的Datasheet PDF文件第5页浏览型号2SD2123L的Datasheet PDF文件第6页浏览型号2SD2123L的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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